2022年9月1日 · Hafnium oxide (HfOx) is being investigated as a new candidate for the passivation layer of silicon solar cells due to its excellent electrical and optical properties, such …

2023年11月1日 · In order to detect the successful incorporation of nitrogen atoms in the lattice of HfOx films, we have done X-Ray photoelectron spectroscopy (XPS) technique. Fig. 3 a and 3b …

2021年12月6日 · The growth of HfOx films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO3)3·6H2O solution (LNS) as an oxidant was investigated. The atomic layer …

2021年1月1日 · In the present study, we demonstrate the importance of ALD temperature window and its impact on the quality of HfOx/Si interface using X-ray photoelectron spectroscopy …

We have used transmission electron microscopy, high-resolution Rutherford backscattering spectrometry (HRBS), and angle-resolved X-ray photoelectron spectroscopy (ARXPS) to …

2018年6月12日 · The effect of different growth conditions on the structure and optical characteristics of deposited HfO2 film has been studied using X-ray photoelectron …

The deposition process was monitored by in situ XPS and the as-deposited structure and chemical bonding were examined by TEM and XPS. The in situ XPS measurement showed …

Hafnium oxide films of different thickness and methods of production were analyzed using XPS, AES, Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), and Q-SIMS. Depth …

2022年5月29日 · In this paper, we present a superlattice-like (SLL) switching layer design to achieve a high-performance analog-type memristor with high conductance modulation …

2009年6月15日 · Hafnium (IV) oxide thin films were synthesized by atomic layer deposition (ALD) on Si (100) substrates, using an innovative guanidinate-stabilized hafnium amide precursor, …