2021年1月6日 · In this work, the improved resistive switching characteristics have been observed in Al/GO/HfO x /ITO/PET flexible ReRAM devices by incorporating a thin HfO x layer. With the …

2022年10月29日 · Here, we present memristive devices with a functional trilayer of HfO x /Al 2 O 3 /TiO 2 tailored by the stoichiometry of HfO x (x = 1.8, 2) and the operating conditions.

2022年9月1日 · Hafnium oxide (HfOx) is being investigated as a new candidate for the passivation layer of silicon solar cells due to its excellent electrical and optical properties, such …

Double-layer stacked HfOx vertical RRAM is demonstrated for 3D cross-point architecture using a cost-effective fabrication process. Electrode/oxide interface en

2014年5月25日 · In this work, we investigate the thermodynamic origins of the possible defective species in HfO 2 -based RRAM stacks, responsible for the Low Resistive State (LRS) and …

2021年12月6日 · XRD patterns of HfO x films deposited using (a) H 2 O and (b) LNS. Various peak assignments are shown (N.O. indicates native oxide). The raw data and peak fitting …

Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS...

2023年5月22日 · High-resolution X-ray diffraction (X’Pert MPD XRD) was used to analyse the structural properties of HfO x thin film. Field emission scanning electron microscopy (FESEM, …

By using Al as the top electrode and AlOX/HfOX bilayer structures, memory devices had repro-ducible and reliable resistive switching operations, good endurance, and good data retention …

SEM，XRD和XPS观测分析表明:实验制备的Fe2O3纳米微粒为单纯的丫相晶粒，无其它杂相，平均粒径约为34.3nm; HfOx薄膜为氧配比不足的单斜相多晶薄膜。