We have carried out a detailed experimental study of the switching dynamics of HfZrO2 Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Metal (M

2020年12月12日 · Herein, an outstandingly reliable and high-speed antiferroelectric HfZrO tunnel junction (AFTJ) is probed to understand whether it is a promising candidate for next …

2022年4月6日 · Here we report HfO 2 –ZrO 2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, …

The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high

2020年8月31日 · Abstract: Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO 2 metal/ferroelectric/metal (MFM) capacitor and ferroelectric field-effect transistor …

HfO 2 -based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, …

2023年12月15日 · AlGaN/GaN HEMT heterostructures grown by metal-organic chemical vapor deposition are augmented with a FE gate stack comprising atomic layer deposition-grown …

2018年9月28日 · Ferroelectricity in HfO 2 -based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of the most attractive topics because of its wide range of applications in ferroelectric …

2019年7月15日 · The ferroelectric HfZrO 2 (HZO) is focused on coercive voltage for onset of negative capacitance (NC) with sub-2.3 kb T/q subthreshold swing (SS). The Fe-FETs with …

2022年12月23日 · In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf) metal–ferroelectric–metal (MFM) thin film varactor …