HRL continues to push GaN MMIC technology to higher levels of performance with plans to add LNAs and higher power amplifiers to our commercial MMIC offerings in the future. In addition, we have the ability to custom design GaN based LNAs, power amplifiers, mixers, switches, and transceiver components for a variety of applications over different ...

HRL Laboratories, LLC, has scheduled quarterly multi-project wafer (MPW) runs in calendar years 2021 and 2022 for its T3 gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) technology. HRL’s T3 GaN is a leading-edge millimeter-wave (mmW), high-electron-mobility transistor technology for next-generation, high-data-rate ...

2022年11月17日 · MALIBU, Calif. November 16, 2022— Researchers at HRL Laboratories, LLC, have fabricated and tested the world’s first X-band nitrogen-polar (N-polar) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC), proving a concept that will enable disruptive improvements in defense electronic applications such as radar, communications ...

hrl目前主要面向毫米波中高频段的gan基于inp的芯片，2006年hrl发布了全球第一款工作在w波段的gan mmic芯片。 网址： HRL Laboratories 5 Northrop Grumman （80GHz~102GHz）

HRL is a world-leader in W-band GaN MMIC power amplifier performance, and makes this capability available to you through our commercial MMIC products. HRL is making available corporate research and development services to select customers.

The LN5-100 is a five stage MMIC amplifier die fabricated using HRL’s H2 InP HEMT process that is AS9100B certified. The LNA is configured with a single drain connection, but the first stage can be configured with a separate drain supply by breaking an airbridge.

We report the development of high efficiency Ka-band (33 GHz - 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL's T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gain of 11.9 dB and associated output power of 24.4 dBm measured at a frequency of 34 GHz in continuous ...

Abstract: This paper presents a single-balanced resistive FET (RFET) MMIC downconvert mixers using HRL Laboratories 40nm T3 GaN HEMT process operating in a single-ended and I-Q modes. MMIC size is 2.5mm X 2.5mm. The mixer operates at W-band with the RF frequency ranging from 92-96 GHz and Local Oscillator (LO) frequency from 86-95 GHz.

2017年9月4日 · Abstract: HRL's T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of operation through gate leakage characteristic changes: burn-in stabilization up to 5 V ...

2023年4月24日 · ENIGMA will address a gap in technology between the compound semiconductor monolithic microwave integrated circuit (MMIC) industry and the silicon radio-frequency integrated circuit (RFIC) industry. Semiconductor device fabrication entails two key processing flows known as front-end and back-end fabrication.