2021年4月22日 · In this regard, the present work demonstrates the possibility of direct growth of o-phase in Zr doped HfO 2 (Hf 0.5 Zr 0.5 O 2: HZO) on Si substrate, with finer crystallites using PLD technique.

A comparison of XRD of nanolaminate, HZO(0.5), and pure ZrO2 film identified the coexistence of o-and t-structures in the nanolaminate. The monoclinic m-phase was not detected in any of these...

2023年3月30日 · Notably, we find that the XRD peak of ferroelectric o -phase HZO in the A-type heterostructure is stronger than that in the B-type heterostructure, while the peak of non-ferroelectric m -phase...

2022年12月1日 · Ferroelectric tunnel junction (FTJ) device based on epitaxial Hf0.5 Zr 0.5 O 2 (HZO) films was fabricated, allowing excellent electronic synaptic behaviors and high accuracy of 93.7% for MNIST database recognition.

The ferroelectricity of Zr-doped HfO₂ (HZO) thin films induced by low thermal budget annealing provides great potential to implement the ferroelectric functionalities into the back end of line ...

The texture and orientation of HZO films were analyzed through the state-of-the-art spherical aberration corrected transmission electron microscope (Cs-TEM) technique.

2023年8月9日 · Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal-oxide-semiconductor technology. Ferroelectricity in HZO films is significantly influenced by the properties of electrode/HZO interfaces.

2023年3月1日 · In this study, the HZO thin films with and without the need for the wake-up process to enhance the ferroelectricity were prepared, and the precession electron diffraction (PED) phase mapping technique was utilized to identify the crystalline phases in the HZO layers.

2021年8月2日 · XPS was used to determine the stoichiometry and chemical state of the elements in the HZO films. XRR measurements were collected to determine the thickness, roughness, and density of HZO films, while GIXRD and conventional XRD measurements were recorded to investigate its crystalline structure and orientation.

本文通过脉冲激光沉积 (PLD)技术，在SrTiO 3 (STO) (001)衬底上生长La 0.7 Sr 0.3 MnO 3 (LSMO)薄膜作为底电极，优化了单一铁电相HZO薄膜的生长工艺。 通过X射线衍射测试和透射电子显微镜确定了HZO，LSMO和STO之间的外延关系。 PFM测试证实HZO薄膜在具有很强的铁电性能。 这些结果说明了HfO 2 基薄膜有望成为传统铁电材料的无铅替代材料，为推动铁电薄膜器件应用的小型化、商业化提供了重要实验依据。