This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

4435由tf(拓锋)设计生产，立创商城现货销售。 4435价格参考￥0.385。 TF(拓锋) 4435参数名称：漏源电压(Vdss)：30V；连续漏极电流(Id)：8A；导通电阻(RDS(on)@Vgs,Id)：20mΩ@10V,8A；功率：2.5W；阈值电压(Vgs(th)@Id)：1V@250uA；栅极电荷(Qg@Vgs)：60nC@15V；输入电容(Ciss@Vds)：1.6nF@15V ...

2022年9月21日 · The AO4435, 4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable foruse as a load switch or in PWM applications.

Description: P-Channel 30-V (D-S) MOSFET. Manufacturer: VBsemi Electronics Co.,Ltd.

下载AO4435中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge superior switching performance.

FDS4435BZ是一款-30V P沟道PowerTrench®MOSFET，专门针对最小化导通电阻和维持低栅极电荷而设计，具有出色的开关性能。 飞兆半导体最新的中压功率MOSFET是经过优化的功率开关，结合了小栅极电荷（QG），小反向恢复电荷（Qrr）和软反向恢复体二极管，有助于快速开关以实现AC/DC电源中的同步整流。 它采用屏蔽栅极结构，可提供电荷平衡。 利用这项先进技术，这些设备的FOM（品质因数（QGxRDS（ON）））比上一代产品降低了66％。 新 …

Surface Mounted on 1" x 1" FR4 board. Max. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

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These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for …