The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges.

The most basic function of an IGBT is the fastest possible switching of electric currents, thus achieving the lowest possible switching losses. As the name “Insulated Gate Bipolar Transistor” reveals, an IGBT is a bipolar transistor with an isolated gate structure; the gate itself is basically a MOSFET. Therefore, the IGBT combines the advan-

本文从MOSFET 技术和开关运行概述入手, 按照由易而难的顺序, 对各类问题进行了阐述。详细介绍了接地参考和高侧栅极驱动电路的设计流程, 以及交流耦合和变压器隔离解决方案。本报告 …

Figure 1 - Silicon cross-section of a planar “punch-through” IGBT and of a trench IGBT. Trench IGBTs have higher levels of electron injection that reduce the voltage drop across the IGBT. The cross-section of an IGBT is very similar to that of a MOSFET but the

The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power

• IGBT is a mature and proven technology with future potential • HV-Diodes have Trade-offs and need to be adapted to the application • Different Generations of IGBTs offer Pros and Cons • Various Applications have different requirements • 3-Level-Inverter offer performance Improvement • Essentials on Gate-Drive of IGBTs Conclusions

characteristics of an IGBT: high-voltage and high-current density, good performances in switching, robustness. Initially, IGBTs, which emerged from power MOSFETs technology, were formed by epitaxy and using what is known as the punch-through (PT) technique [3]. INSULATED GATE BIPOLAR TRANSISTORS The IGBT is a power semiconductor transistor based on

With the combination of an easily driven MOS gate and low conduction loss, IGBTs quickly displaced power bipolar transistors as the device of choice for high current and high voltage applications.

近期推出的 igbt 将沟槽栅与场截止结构相结合， 旨在抑制固有的寄生 npn 行为。该方法有助于降低器件的饱和电 压和导通电阻，从而提升整体功率密度。 图 1：沟槽场截止 igbt 结构. 应用与拓扑结构. 如今，igbt 通常用于特定应用的拓扑结构，下面列举了其中的几 ...

IGBT (insulated gate bipolar transistor), the exceptional technical properties of which mean that it has replaced all previous fully controllable power semiconductor components in existing systems and opened up completely new fields of application.