An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) [1][2][3][4][5] that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

2024年4月22日 · IGBT是“Insulated Gate Bipolar Transistor”的首字母缩写，中文名称是“绝缘栅双极晶体管”。 通过结合MOSFET和双极晶体管，IGBT成为同时具备这两种器件优点的功率晶体管。 IGBT有N沟道型和P沟道型两种，本文中以目前主流的N沟道型为例展开介绍。

The IGBT (Insulated Gate Bipolar Transistor) takes the best parts of both BJT and MOSFET into a single transistor. It takes the input characteristics (high input impedance) of MOSFET (Insulated Gate) and the output characteristics of BJT (Bipolar nature).

2020年4月6日 · IGBT is the short form of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices

绝缘栅双极晶体管（Insulate-Gate Bipolar Transistor—IGBT）综合了电力晶体管（Giant Transistor—GTR）和电力场效应晶体管（Power MOSFET）的优点，具有良好的特性，应用领域很广泛；IGBT也是三端器件：栅极，集电极和发射极。

IGBT 是绝缘栅双极晶体管的简称，是一种三端半导体开关器件，可用于多种电子设备中的高效快速开关。 IGBT 主要用于放大器，用于通过 脉冲宽度调制 (PWM) 切换/处理复杂的波形。 就像我上面说的 IGBT 是 BJT 和 MOS管的融合，IGBT 的符号也代表相同。 你可以看到输入侧代表具有栅极端子的 MOS管，输出侧代表具有集电极和发射极的 BJT。 集电极和发射极是导通端子，栅极是控制开关操作的控制端子。 IGBT 有三个端子（集电极、发射极和栅极）都附有金属层。 然 …

Infineon’s industrial and power control IGBTs are designed with superior current capability and higher pulse load capacity for enhanced robustness. The IGBTs can withstand voltages up to 6.5 kV and operate at switching frequencies from 2 kHz to 50 kHz.

IGBT (绝缘栅双极型晶体管），是由 BJT (双极结型晶体三极管) 和 MOS (绝缘栅型场效应管) 组成的复合全控型-电压驱动式-功率半导体器件,其具有自关断的特征。

登载IGBT模块 S系列通用的技术资料。 © Fuji Electric Co., Ltd. All rights reserved.

ST offers a comprehensive portfolio of insulated gate bipolar transistors (IGBTs) ranging from 300 to 1700 V, belonging to the STPOWER family. Copackaged antiparallel diode option for improved power dissipation and optimal thermal management.