An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have …

IMPATT diode is a very high power semiconductor device that is utilized for microwave applications. It is basically used as oscillator and amplifier at microwave frequencies. The …

IMPATTdiode一种具有负阻特性的周态微波二极管，其特性系由薄基片中的碰撞雪崩击穿效应和载流子渡越时间效应结合产生，而基片通常由砷化镓或硅制成。 当将这种二极管适当地安装在 …

2024年2月27日 · IMPATT (Impact Avalanche and Transit Time) diodes are essential parts of high-frequency semiconductor applications, especially in the millimeter-wave and microwave …

2021年7月29日 · What is IMPATT Diode? The full form of IMPATT diode is IMPatt ionization Avalanche Transit-Time. This is an extremely high-power diode used in microwave …

2021年10月18日 · 什么是impatt二极管？impatt二极管的全称是impatt电离雪崩传输时间。 这是一种用于微波应用的极高功率二极管。 一般用作微波频率的放大器和振荡器。 impatt 二极管的 …

investigated the use of a lateral IMPATT (IMPact Avalanche Transit Time) diode as a high frequency (e.g. 77GHz) power source, built in a conventional 0.25pm CMOS technology. …

IMPATT diode is abbreviated as an impact-ionization avalanche transit-time diode. It is an active solid-state device that operates by a reverse bias adequate to cause avalanche breakdown. …

IMPATT diodes are semiconductor devices that generate relatively high-power microwave signals at frequencies between about 3 GHz and 100 GHz or more. IMPATT is an abbreviation for …

IMPATT (IMPact Avalanche ionization and Transit Time) diodes are principal active elements for use in millimetric pulsed-mode generators. Semiconductor structures suitable for fabrication of …