Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF1010E - Infineon Technologies
60V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
IRF1010 数据手册 MOS管芯片 - 百芯EMA
2023年1月12日 · N 通道功率 MOSFET 80A 至 99A，InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产 …
IRF1010N - Infineon Technologies
55V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.
IRF1010 Datasheet(PDF) - Nell Semiconductor Co., Ltd
Description: N-Channel Power MOSFET. Manufacturer: Nell Semiconductor Co., Ltd.
IRF1010E Datasheet (PDF) - International Rectifier
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well.
HEXFET® this Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera-ture, fast switching speed and improved repetitive avalanche rating .
-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in .
INFINEON英飞凌IRF1010EPBF (MOS管)引脚封装图及中文参数介绍
2024年6月17日 · INFINEON英飞凌的型号IRF1010EPBF(如有采购和样品测试需求请联系我司)属于场效应管 (MOSFET)，是IR MOSFET™功率MOSFET系列采用经验证的硅工艺，为设计者提供了广泛的设备组合，以支持各种应用，如直流电机、逆变器、SMPS、照明、负载开关以及电池供电的应用。 这些设备有多种表面安装和通孔封装，具有行业标准封装，便于设计。 - 器件最高可承受1000V的栅源电压，适用于高压电路设计。 - 可广泛应用于电网连接、工业电机驱动、UPS …
IRF1010Z - Infineon Technologies
55V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.
- 某些结果已被删除