75V Single N-Channel Power MOSFET in a TO-220 package.

IRF2807 Product details Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

75V Single N-Channel Power MOSFET in a TO-220 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

IRF2807是电压Vds，最大75V，典型应用，气候控制，ABS，电子制动，挡风玻璃，雨刷器Lead-Free。

IRF2807PBF Infineon Technologies MOSFET MOSFT 75V 82A 13mOhm 106.7nC 資料表、庫存和定價。

IRF2807PBF – N-Channel 75 V 82A (Tc) 230W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

来自 Infineon Technologies 的 IRF2807PBF – 通孔 N 通道 75 V 82A（Tc） 230W（Tc） TO-220AB。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Ground Plane. Low Leakage Inductance Current Transformer.