100V Single N-Channel MOSFET in a TO-220 package.

irf530n-vb价格参考￥5.24。 VBsemi(微碧半导体) IRF530N-VB参数名称：类型：1个N沟道；漏源电压(Vdss)：100V；连续漏极电流(Id)：18A；耗散功率(Pd)：105W；阈值电 …

IRF530N Product details Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per …

Infineon公司的IRF530NPBF是一款100V单N沟道HEXFET功率MOSFET，TO-220AB封装.该MOSFET具有极低的单位面积导通电阻，动态dv/dt额定值，坚固耐用，快速开关，以及完全 …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and …

©2002 Fairchild Semiconductor Corporation IRF530N Rev. B PSPICE Electrical Model .SUBCKT IRF530N 2 1 3 ; rev 15 July 2001 CA 12 8 1.27e-9 CB 15 14 1.27e-9 CIN 6 8 7.20e-10 …

IRF530N-VB. Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

2024年5月7日 · IRF530N 是一款功能强大的N沟道MOSFET，广泛应用于多种电子设备中，尤其适合于需要高效率开关的场合。 这种半导体器件因其出色的电气性能和高可靠性，而在电源管 …