100V Single N-Channel MOSFET in a TO-220 package.

Part #: IRF530N. Download. File Size: 212Kbytes. Page: 8 Pages. Description: Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A). Manufacturer: International Rectifier.

IRF530NPBF – N-Channel 100 V 17A (Tc) 70W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Sep 2, 2021 · IRF530 is a N-channel MOSFET designed for high speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

©2002 Fairchild Semiconductor Corporation IRF530N Rev. B PSPICE Electrical Model .SUBCKT IRF530N 2 1 3 ; rev 15 July 2001 CA 12 8 1.27e-9 CB 15 14 1.27e-9 CIN 6 8 7.20e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 117.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Normalised drain-source on-state resistance.

The IRF530N is an N-Channel power MOSFET supplied in the TO220AB conventional leaded package. This article is going to explain the datasheet, pinout, applications, benefits, and more details about IRF530N MOSFET.

View datasheets for IRF530N(S,L)PbF by Infineon Technologies and other related components here.