IRF540N. Overview. 100V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are ...

Part #: IRF540N. Download. File Size: 99Kbytes. Page: 8 Pages. Description: Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A). Manufacturer: International Rectifier.

IRF540N Rev. C IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Symbol Features • Ultra Low On-Resistance-r DS(ON) = 0.040 Ω, V GS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER © Electrical Models - Spice and SABER © Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width ...

Dec 8, 2017 · The IRF540N is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A.

IRF540 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2021 4 Document Number: 91021 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

Order today, ships today. IRF540NSTRLPBF – N-Channel 100 V 33A (Tc) 130W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

IRF540N www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 T , Junction Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS ...

Mar 5, 2021 · The IRF540N is an advanced HEXFET N-channel power mosfet, from International Rectifier. The device is extremely versatile with its current, voltage switching capabilities, and thus becomes ideal for numerous electronic applications.

IRF540NPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode.

IRF540N † Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‡ Starting TJ = 25°C, L = 2.0mH RG = 25Ω, IAS = 16A. (See Figure 12). Notes: …ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C — Pulse width ≤ 300µs; duty cycle ≤ 2% S D G Parameter Min. Typ. Max. Units Conditions