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IRF640 Product details Description Third Generation HEXFETs from International Rectifier provide the designer with best combination of fast switching, ruggedized device design, low on …

IRF640 www.vishay.com Vishay Siliconix S24-1253-Rev. D, 09-Dec-2024 4 Document Number: 91036 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT …

IR MOSFET™ N-channel ; TO-220 package; 150 mOhm; The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to …

IRF640. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) …

IRF640NPBF由Infineon(英飞凌)设计生产，立创商城现货销售。IRF640NPBF价格参考￥1.01。Infineon(英飞凌) IRF640NPBF参数名称：类型：1个N沟道；漏源电压(Vdss)：200V；连续漏 …

HEXFET® Power MOSFET 07/23/10 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM …

irf640为设计者提供了转换快速、坚固耐用、低导通阻抗和高效益的强力组合。 TO-220封装的IRF640普遍适用于功耗在50W左右的工商业应用，低热阻和低成本的TO-220封装，使IRF640 …

立创商城提供minos(迈诺斯)的场效应管(MOSFET)IRF640中文资料,PDF数据手册,引脚图,封装规格,价格行情和库存，采购IRF640上立创商城

©2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF640B/IRFS640B 10-1 100 101 10-1 100 10 1 V Top : 15.0 VGS 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V