This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. 1. HIGH CURRENT SWITCHING. 2. UNINTERRUPTIBLE POWER SUPPLY (UPS) 3. DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND …

IRF740. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High ...

IRF740A www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

IRF740B www.vishay.com Vishay Siliconix S16-0799-Rev. B, 02-May-16 4 Document Number: 91519 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin.

Description: N-Channel Power MOSFETs, 10A, 350V/400V. Manufacturer: Fairchild Semiconductor.

IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH™ II Power MOSFET General features Exceptional dv/dt capability 100% avalanche tested Low gate charge Very low intrinsic capacitances Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the