IRFP250N Product details Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

200V Single N-Channel Power MOSFET in a TO-247 package.

IRFP250NPBF由Infineon (英飞凌)设计生产，立创商城现货销售，正品保证，参考价格￥2.86，封装为TO-247AC-3。 商城还提供IRFP250NPBF专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。 参数：类型：1个N沟道；漏源电压 (Vdss)：200V；连续漏极电流 (Id)：30A；导通电阻 (RDS (on))：75mΩ@10V,18A；耗散功率 (Pd)：214W；阈值电压 (Vgs (th))：4V；栅极电荷量 (Qg)：123nC；输入电容 …

IRFP250N由Infineon(英飞凌)设计生产，立创商城现货销售，正品保证，参考价格￥0，封装为TO-247AC。 商城还提供IRFP250N专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。

Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFP250NPBF – N-Channel 200 V 30A (Tc) 214W (Tc) Through Hole TO-247AC from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

IRFP250N IRFP250N N-Channel Power MOSFET 200V, 30A, 0.075 Ω Features • Ultra Low On-Resistance-r DS(ON) = 0.052 Ω (Typ), V GS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER © Electrical Models - Spice and SABER © Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve MOSFET Maximum ...

IRFP250NPBF是采用TO-247AC封装的200V单N沟道HEXFET功率MOSFET。 该MOSFET具有每硅面积极低的导通电阻、动态dv/dt额定值、易于并联、坚固、快速开关、简单的驱动要求和完全雪崩额定值，众所周知，功率MOSFET可提供极高的效率和可靠性，可以可用于各种应用。 立创商城IRFP250NPBF型号页面提供型号详细中文资料，PDF数据手册在线查看和下载,中文参数，引脚图，代替型号和在线购买等信息。 买IRFP250NPBF型号,上立创商城.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRFP250N是一款高性能的HEX菲利普斯场效应晶体管（HEXFET），它属于第五代PowerMOSFET器件，由国际 Rectifier公司采用先进的加工工艺制造。 这款器件的主要特点包括： 1.