This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. S-81271-Rev. A, 16-Jun-08. New Jersey Semi-Conduct...

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

Products » IRFP450. IRFP450 PRODUCT INFORMATION. Power MOSFET. FEATURES. Dynamic dV/dt Rating. Repetitive Avalanche Rated. Isolated Central Mounting Hole. Datasheet. Request Sample. Buy Now. Disclaimer: Please carefully read the disclaimer below before proceeding and before using this data. Your use of this data constitutes your acceptance of ...

IRFP450PBF由VISHAY (威世)设计生产，立创商城现货销售。 IRFP450PBF价格参考￥5.5。 VISHAY (威世) IRFP450PBF参数名称：类型：1个N沟道；漏源电压 (Vdss)：500V；连续漏极电流 (Id)：8.7A；导通电阻 (RDS (on))：400mΩ@10V,8.4A；耗散功率 (Pd)：190W；阈值电压 (Vgs (th))：4V；栅极电荷量 (Qg)：150nC@10V；输入电容 (Ciss@Vds)：2.6nF；反向传输电容 (Crss)：340pF@25V；工作温度：-55℃~+150℃。 下载IRFP450PBF中文资料、引脚图 …

Part #: IRFP450. Download. File Size: 169Kbytes. Page: 6 Pages. Description: Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A). Manufacturer: International Rectifier.

www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms ≤ 1 ≤ 0.1 % +-Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

IRFP450 Vishay Semiconductor MOS管芯片中文资料PDF, 共(10)页, IRFP450数据手册有芯片封装TO-247引脚图及功能定义和参数资料, 功率MOSFET Power MOSFET。

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Fig 12a.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.