55V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Part #: IRFZ34N. Download. File Size: 195Kbytes. Page: 8 Pages. Description: Power MOSFET (Vdss=55V, Rds (on)=0.040ohm, Id=26A). Manufacturer: International Rectifier.

下载IRF9Z34N中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

2021年4月3日 · This post describes IRFZ34N transistor pinout, equivalent, features, applications and other details on how and where to use this TO-220 package MOSFET.

IRFZ34NPBF – N-Channel 55 V 29A (Tc) 68W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. and cost-effectiveness. The TO-220AB …

IRFZ34N 55V Single N-channel HexFET Power MOSFET in a TO-220AB Package . Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing

元器件型号为IRFZ34N的类别属于分立半导体晶体管，它的生产商为Infineon (英飞凌)。 厂商的官网为：......点击查看更多

类型： N沟道场效应管. 耗散功率（PD）： 68 W. 漏极电流（ID）： 29 A. 漏极和源极电压（V DSS）： 55 V. 漏极和源极通态电阻（R DS (on)）： 0.04 Ω. 封装： TO-220AB.