55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

2019年4月18日 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting. Hence it is commonly used with microcontrollers to drive with 5V.

2023年4月24日 · The IRFZ44N is a powerful MOSFET transistor that can be used in a variety of applications. This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and troubleshooting tips.

2020年10月18日 · IRFZ44N is a widely used MOSFET transistor designed to use in variety of general purpose applications. The transistor possesses high speed switching capability which makes it ideal to use in applications where high speed switching is a crucial requirement.

View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featuresverylowon-stateresistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. MIN. MAX. MIN. MAX.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

2022年12月19日 · The IRFZ44N is a voltage-controlled variable N-channel Power MOSFET available in the TO-220 package in enhancement mode. It is used to produce very low-resistance silicon regions with advanced processing techniques and high switching speed in …