Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

55V Single N-Channel Power MOSFET in a TO-220 package.

Part #: IRFZ46N. Description: Power MOSFET (Vdss=55V, Rds (on)=16.5mohm, Id=53A). File Size: 85.31 Kbytes. Manufacturer: International Rectifier.

2021年4月18日 · IRFZ46N is an N Channel MOSFET available in TO-220 package. This transistor can be used in wide variety of applications. The transistor can drive max load of 53A and 180A in pulse mode. The maximum load voltage is 55V and power dissipation of the transistor is 107 Watt.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

部件名: IRFZ46N. 下载. 文件大小: 85Kbytes. 页: 8 Pages. 功能描述: Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A). 制造商: International Rectifier.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

下载IRFZ46NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

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Uses IRFZ46N data and test conditions. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A.