断路器上的InN=100%*In意思是N相能通过的电流可以达到In，主要涉及到万能式断路器的结构了，ABB万能断路器上的InN=2In就是能通过2倍的In，从字面解释就是这样的，ABB属于国际一流品

2024年6月6日 · The INN100W032A is a 100 V enhancement-mode GaN power transistor for Class D audio, high-frequency DC-DC converters, motor drives and more. Innoscience …

1. General description GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Solder Bar WLCSP with 3.5 mm x 2.13 mm package size.

Fig. 7 Typ. Reverse Drain-Source Characteristics (VGS≤0,TJ =25°C)

Fig. 9 Typ. Reverse Drain-Source Characteristics (VGS≤0,TJ =125°C)

概要信息 产品型号: XT1B 160 TMD 125-1250 4p F F InN=100% 产品ID: 1SDA066888R1 欧洲商品编号 (EAN): 8015644007911 目录说明: XT1B 160 TMD 125-1250 4p F F InN=100% 详细描述: C.BREAKER TMAX XT1B 160 FIXED FOUR-POLE WITH FRONT TERMINALS AND THERMOMAGNETIC RELEASE TMD R 125-1250 A FULLY RATED NEUTRAL

Fig. 7 Typ. Reverse Drain-Source Characteristics (VGS≤0,TJ =25°C)

General description GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) with ultra-low on resistance.

XT4H 250 TMA 200-2000 4p F F InN=100% 概要信息 产品型号: XT4H 250 TMA 200-2000 4p F F InN=100% 产品ID: 1SDA068362R1 欧洲商品编号 (EAN): 8015644022686 目录说明: XT4H 250 TMA 200-2000 4p F F InN=100% 详细描述: C.BREAKER TMAX XT4H 250 FIXED FOUR-POLE WITH FRONT TERMINALS AND THERMOMAGNETIC RELEASE TMA R 200 I3=1000...2000 A FULLY RATED NEUTRAL

The INN100FQ016A from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 1.4 to 1.8 milli-ohm, Continous Drain Current 100 A, Pulsed Drain Current 320 A. Tags: Surface Mount. More details for INN100FQ016A can be seen below.