2017年4月25日 · Abstract: Millimeter and submillimeter indium phosphide (InP) microwave monolithic integrated circuits (MMICs) are increasingly used in applications spanning Earth science, astrophysics, and defense. In this paper, we characterize direct detection and heterodyne gain fluctuations of 35-, 30-, and 25-nm gate-length InP MMIC low-noise amplifiers ...

单片微波集成电路 ， 即MMIC是 Monolithic Microwave Integrated Circuit 的缩写，它包括多种功能电路，如 低噪声放大器 （LNA）、 功率放大器 、 混频器 、上变频器、 检波器 、 调制器 、 压控振荡器 （ VCO ）、移相器、开关、MMIC收发前端，甚至整个发射/接收（T/R）组件 ...

2016年3月18日 · inp基器件具有高频、低噪声、高效率、抗辐照等特点，成为w波段以及更高频率毫米波电路的首选材料。inp基三端电子器件主要有inp基异质结双极晶体管（hbt）和高电子迁移率晶体管（hemt）。

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors.

ommic在gaas、inp 、gan等iii–v族化合物方面拥有40多年丰富经验，其创新型的解决方案能使客户在竞争日益激烈的市场环境下脱颖而出，其多项工艺得到欧空局的成功验证和认可，并被列入eppl清单当中。

A 25nm InP high electron mobility transistor (HEMT) transistor with excellent yield and uniformity was developed for use with the first ever Terahertz Monolithic Integrated Circuit (TMIC) amplifier. The transistor exhibited 3.5 dB maximum available gain at 1Thz and projected f MAX of 1.5THz. Amplifiers designed using this

The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy

A complete MMIC design-kit based on InP/GaAsSb DHBTs using two Teflon AF interlevel dielectric layers has been developed in order to provide a suitable technological platform for future millimeter-wave applications. The design-kit includes DHBTs, MIM-capacitors, resistors, GSG-pads, through-substrate vias, transmission lines and

Abstract: A 0.1-mum InP HEMT Ka-band LNA with high and flat gain, very low noise figure and low VSWR has been developed. Across the entire Ka-band, of 26 GHz to 40 GHz, the MMIC LNA demonstrated associated gain of 21.9 plusmn 0.9 dB and an average noise figure of 1.5 dB with a minimum of 1.3 dB at 34 GHz.

A monolithic microwave integrated circuit (MMIC) has been designed to function as a low-power-consumption, low-noise amplifier (LNA) at frequencies from about 65 to about 110 GHz. This MMIC incorporates TRW's state-of-the-art, InP-based, high-electron-mobility transistors (HEMTs) coupled with coplanar- waveguide (CPW) transmission lines, thin ...