2023年9月1日 · The crystallinity of the as-grown InTe films was investigated by using an X-ray diffraction (XRD) system (Rigaku smartlab, Japan) with Cu Kα radiation (λ = 1.5406 Å). …

We report high-pressure Raman scattering measurements on the tetragonal phase of InTe corroborated with the first-principles density functional theory and synchrotron x-ray diffraction...

2018年4月27日 · We report high-pressure Raman scattering measurements on the tetragonal phase of InTe corroborated with the first-principles density functional theory and synchrotron x …

2019年7月29日 · In this work we report a facile route to grow large area, uniform, continuous and few-layer α-In 2 Te 3 film via chemical vapor deposition (CVD) methods. The characterizations …

InTe is a tetragonal semiconductor that crystallizes in the TlSe structure under ambient conditions [19]. It is best described by the tetragonal space group I4/mcm, with the unit cell [ Fig. 1...

2025年3月1日 · Thermoelectric properties of InTe are successfully improved by reducing In + vacancies and single crystal orientation. Record-high power factor of 12.0 μW·cm −1 ·K −2 …

pressure-dependent behavior of InTe using Raman scattering measurements and complement it with the first-principles theoretical calculations to gain insights into the systematics

2021年5月7日 · This work presents a systematic study of phonon modes in Indium tellurides (In 2 Te 5), a member of Pentatelluride M 2 Te 5, where M = Al, Ga, and In, by Raman …

In this work, we have systematically investigated the pressure-dependent behavior of InTe through the Raman scattering measurements and the first-principles calculations on InTe …

拉曼光谱是一种无损的分析技术，它是基于光和材料内化学键的相互作用而产生的, 可以提供样品化学结构、相和形态、结晶度以及分子相互作用的详细信息。 发现 拉曼散射 的印度科学家拉 …