Intel released the 1101 static random-access memory, the first commercial chip to successfully implement two key technologies: metal oxide semiconductors and silicon gates. The two innovations would make integrated circuits cheaper, higher quality and more efficient to produce, paving the way for lower-cost computers and, eventually, PCs.

3101问世不久，英特尔又推出了世界上第一款 MOS存储器 ，Intel 1101。英特尔在1101上采用当时更先进的MOS工艺。相比Bipolar，MOS工艺器件的密度更高，1101容量是3101的四倍，达到256比特。 3101和1101连续抢了两次第一，不过这两款产品影响不大。

2018年5月17日 · Intel’s 1101 static random access memory (SRAM) was the first high-volume metal-oxide semiconductor (MOS) memory and the first chip to use silicon gates. The device was the result of a challenging development process.

Intel 1101: The first MOS memory chip. A 256-bit SRAM (Static Random Access Memory). The 1101 was developed in parallel with the 3101, but lost the race to be Intel’s first product. It was produced with Silicon gate MOS (Metal Oxide Semiconductor) technology, which gave Intel the edge it needed to produce high density memories.

Released later in 1969, the 1101 was the first commercial chip to use a metal-oxide semiconductor process and rely on silicon gates rather than metal. It thereby changed semiconductor technology forever while establishing an important revenue stream for Intel.

The 1101 memory used miniature semiconductor transistors in place of the bulky magnetic cores. The Intel 1101 chip was made with Medal-Oxide Semiconductor Field Effect Transistors, or MOSFETs, shortened to just MOS.

Released later in 1969, the 1101 was the first commercial chip to use a metal-oxide semiconductor (MOS) process and rely on silicon gates rather than metal. It changed semiconductor technology forever while establishing an important revenue stream for Intel.

In fall 1969, Intel was having reliability problems with its 1101 static read-only memory (SRAM), the first mass-produced chip to use metal-oxide semiconductor technology. Dov Frohman, who had recently come to Intel from Fairchild Semiconductors, was asked to investigate the problem.

Enlarged black-and-white photograph of the Intel® 1101 RAM Memory Die. Concept: Ted Hoff. Design: Joel Karp. Project management: Les Vadasz.

2018年5月17日 · Intel's 1101 static random access memory (SRAM) was the first high-volume metal-oxide semiconductor (MOS) memory and the first chip to use silicon gates. The device was the result of a challenging development process.