Pro-prietary HVIC and latch immune CMOS technologies 8-Lead SOIC 8-Lead PDIP enable ruggedized monolithic construction. The logic IR2101S/IR2102S IR2101/IR2102 input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

EiceDRIVER™ 600 V High-side and low-side Driver IC with typical 0.21 A source and 0.36 A sink output currents. It comes with a functional levelshift SOIC 8N package and works with IGBTs and MOSFETs.

The IR2101/IR21014/IR2102/IR21024 are high voltage, high speed power MOSFET and IGBT drivers with in-dependent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS tech-nologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output.

The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.

下载IR2102SPBF中文资料、引脚图、Datasheet数据手册，有栅极驱动芯片详细引脚图及功能的应用电路图电压和使用方法及教程。

IR2102是一款高性能双路低侧驱动器，专为驱动MOSFET和IGBT而设计。 其高速和高电流驱动能力使其适用于各种应用领域，如电机驱动、逆变器和电源等。 以下是IR2102使用手册的简介： 1.高速驱动能力：IR2102具有高达500V/ns的峰值输出电流能力，能够快速来自百度文库动MOSFET和IGBT，提供高效的开关速度。 ir2102使用手册-3.输入信号：将控制信号输入到IR2102的输入引脚，以控制MOSFET或IGBT的开关状态。 4.配置与调整：如有需要，可以通 …

2020年7月21日 · ir2101（s）/ir2102（s）是高压、高速功率mosfet和igbt驱动器，具有独立的高、低压侧参考输出通道。 专有的HVIC和闩锁免疫CMOS技术使加固单片结构成为可能。

IR2102 - International Rectifier（国际整流器） 技术参数、封装参数

来自 Infineon Technologies 的 IR2102 – 半桥 栅极驱动器 IC 反相 8-PDIP。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

IR2102 – Half-Bridge Gate Driver IC Inverting 8-PDIP from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.