
2004年10月15日 · IR2181 IR2181(4)(S) & (PbF) www.irf.com 1 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. Description The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with ...
IR2181S - Infineon Technologies
600 V high-side and low-side gate driver IC. EiceDRIVER™ 600 V high and low-side Gate Driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14-Lead PDIP .
测试IR2181s的功能 - CSDN博客
2024年5月11日 · 本 文测试了MOS管半桥驱动电路 IR2181s, 它有两路输入, 高低两路输出。 这样可以在单片机PWM模块中设定合适的死区时间, 保证上下MOS管能够避免直通。 后面根据这些初步测试结果设计半桥功率电路。 相关图表链接: 文章浏览阅读886次,点赞4次,收藏13次。 可以看到上面MOS管的栅极电压的幅值是下面MOS管电压的两倍。 这里需要说明的是, MOS 管的工作电压与 IR2181 的驱动电压都是 12V。 所以, 在这种情况下, 上面MOS管的栅极驱动电流 …
IR2181SPBF_Infineon(英飞凌)_IR2181SPBF中文资料_PDF手册_价 …
下载IR2181SPBF中文资料、引脚图、Datasheet数据手册,有栅极驱动芯片详细引脚图及功能的应用电路图电压和使用方法及教程。
IRS2181 vs. Frequency (IRFPE50), Rgate=10 Ω , VCC=15 V. 0 V. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. CONTROLLING DIMENSION: MILLIMETER. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
IR2181 Datasheet (PDF) - International Rectifier
The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
IR2181 Infineon Technologies | Integrated Circuits (ICs) | DigiKey
IR2181 – Half-Bridge Gate Driver IC Non-Inverting 8-PDIP from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
IR2181S 数据表 (PDF) - Infineon Technologies AG
The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
IR2181参数_FET驱动器芯片中文资料_Infineon - 百芯EMA
IR2181 Infineon FET驱动器芯片中文资料PDF, 共(21)页, IR2181数据手册有芯片封装PDIP-8和参数资料。
IR2181 Infineon Technologies | 集成电路(IC) | DigiKey
来自 Infineon Technologies 的 IR2181 – 半桥 栅极驱动器 IC 非反相 8-PDIP。 DigiKey 提供数以百万计电子元器件的定价和供应信息。
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