60V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well.

2018年4月14日 · IRF1010E is an n-channel enhancement MOSFET designed for high speed switching applications. It also has low turn ON resistance. Like any other MOSFET the IRF1010E is voltage controlled device and MOSFET state is decided by GATE voltage. It has three pins namely GATE, DRAIN and SOURCE. The pin configuration of IRF1010E is given below.

下载IRF1010EPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Ground Plane. Low Leakage Inductance Current Transformer. dv/dt controlled by RG.

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IRF1010E Infineon MOS管芯片中文资料PDF, 共(9)页, IRF1010E数据手册有芯片封装TO-220和参数资料。

IRF1010E HEXFET® Power MOSFET PD - 9.1670B Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

Download IRF1010E Datasheet. File Size: 195.51 Kbytes. Part #: IRF1010E. Description: Power MOSFET (Vdss=60V,Rds (on)=12mohm,Id=84A?. Manufacturer: International Rectifier.