100V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

IRF1310N Product details Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

8 www.irf.com Note: "P" in assembly line pos ition indicates "Lead-Free" F530S THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000

IRF1310N HEXFET® Power MOSFET PD - 91504A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

– Uses IRF1310N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994.

Description: Power MOSFET (Vdss=100V, Rds (on)=0.036ohm, Id=42A). 16 Results. Datasheet: 338Kb/2P. Manufacturer: Inchange Semiconductor Company Limited.

部件名: IRF1310N. 下载. 文件大小: 96Kbytes. 页: 8 Pages. 功能描述: Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A). 制造商: International Rectifier.

Download IRF1310N Datasheet. File Size: 96.76 Kbytes. Part #: IRF1310N. Description: Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A). Manufacturer: International Rectifier.

N 通道功率 MOSFET 40A 至 49A，InfineonInfineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控 …