The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF350 with Hermetic Packaging. Infineon’s defense portfolio includes high reliability memories, power management and power conversion solutions for extreme operating environments.

Description: N-CHANNEL POWER MOSFETS. 8 Results. Datasheet: 117Kb/4P. Manufacturer: Fairchild Semiconductor.

View IRF350 datasheet for technical specifications, dimensions and more at DigiKey.

TO–3 (TO-204AA) Metal Package Pin 1 – Source Pin 2 – Gate Case – Drain

400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - A IRF350 with Hermetic Packaging

下载IRF350中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

IRF350-QR Cicor MOSFET 資料表、庫存和定價。

Part #: IRF350. Download. File Size: 212Kbytes. Page: 5 Pages. Description: N-CHANNEL POWER MOSFETS. Manufacturer: Samsung semiconductor.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.