30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

IRF3708/S/LPbF www.irf.com 3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS(on ...

Description: Power MOSFET (Vdss=30V, Rds (on)max=12mohm, Id=62A). Manufacturer: International Rectifier.

IRF3708 – N-Channel 30 V 62A (Tc) 87W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

IRF3708STRL Infineon MOS管芯片中文资料PDF, 共 (11)页, IRF3708STRL数据手册有芯片封装TO-263-3和参数资料。

www.irf.com 1 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max ID 30V 12.5mΩ 61A Notes through are on page 9 Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 61

2 天之前 · IRF3708PBF Infineon Technologies MOSFETs MOSFT 30V 62A 12mOhm 24nC datasheet, inventory, & pricing.

来自 Infineon Technologies 的 IRF3708 – 通孔 N 通道 30 V 62A（Tc） 87W（Tc） TO-220AB。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

IRF3708/3708S/3708L 2 www.irf.com Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 213 mJ IAR Avalanche Current ––– 62 A Avalanche Characteristics S D G Diode Characteristics 62 248 A Symbol Parameter Min. Typ. Max. Units Conditions

IRF3708 Description. N-Channel MOSFET.