Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W.

下载IRFZ44NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. S-81378-Rev.

accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance i.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Dynamic dV/dt rating175 °C operating temperaturePower MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featuresverylowon-stateresistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications. MIN. MAX. MIN. MAX.

Manufacturer: Samsung semiconductor. Description: N-CHANNEL POWER MOSFETS. 28 Results. Datasheet: 150Kb/5P. Manufacturer: Fairchild Semiconductor.