IRF9130 (JANTX2N6804) PD-90549F Repetitive Avalanche and dv/dt Rated Power MOSFET Thru-Hole (TO-204AA) -100V, -11A, P-channel eatures • Repetitive avalanche ratings • Dynamic dv/dt rating • Hermetically sealed • Simple drive requirements • ESD rating: Class 1C per MIL-STD-750, Method 1020 Potential Applications

-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package - A IRF9130 with Hermetic Packaging. Infineon’s defense portfolio includes high reliability memories, power management and power conversion solutions for extreme operating environments.

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

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Part #: IRF9130. Download. File Size: 508Kbytes. Page: 12 Pages. Description: P-CHANNEL POWER MOSFETS. Manufacturer: Samsung semiconductor.

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis-tance combined with high transconductance; superior re-verse energy and diode recovery dv/dt capability.

Infineon’s defense portfolio includes high reliability memories, power management and power conversion solutions for extreme operating environments.

元器件型号为IRF9130的类别属于分立半导体晶体管，它的生产商为Infineon(英飞凌)。厂商的官网为：.....点击查看更多

2023年8月26日 · Part Number: IRF9130. Function: 100V, 11A, P-CHANNEL POWER MOSFET. Package: TO-3 Metal Type. Manufacturer: Seme LAB. Images:

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.