
IRF9510 MOSFETs | Vishay
IRF9510. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information: Package Information. TO-220AB (High Voltage) Reliability Data: Silicon Technology Reliability.
IRF9510 www.vishay.com Vishay Siliconix S21-0852-Rev. C, 16-Aug-2021 4 Document Number: 91072 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
IRF9510_TI(德州仪器)_IRF9510中文资料_PDF手册_价格-立创商城
IRF9510由TI(德州仪器)设计生产,立创商城现货销售。IRF9510价格参考¥1.58。TI(德州仪器) IRF9510参数名称:类型:1个P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):4A;导通电阻(RDS(on)):1.2Ω@10V,2.4A;耗散功率(Pd):43W;阈值电压(Vgs(th)):4V;栅极电荷量(Qg):8.7nC@10V;输入电容(Ciss@Vds):200pF@25V;工作温度 ...
IRF9510 Datasheet (PDF) - International Rectifier
International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors.
IRF9510 Harris Corporation | Discrete Semiconductor Products
IRF9510. DigiKey Part Number. 2156-IRF9510-HC-ND. Manufacturer. Harris Corporation. Manufacturer Product Number. IRF9510. Description. MOSFET P-CH 100V 4A TO220AB. Customer Reference. Detailed Description. P-Channel 100 V 4A (Tc) 43W (Tc) Through Hole TO-220AB. Datasheet
©2001 Fairchild Semiconductor Corporation IRF9510 Rev. A File Number 2214.4 IRF9510 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of ...
IRF9510引脚图及功能_参数_MOS管芯片中文资料_VISHAY - 百 …
irf9510 vishay mos管芯片中文资料pdf, 共(9)页, irf9510数据手册有芯片封装to-220引脚图及功能定义和参数资料, 功率mosfet power mosfet。 IRF9510引脚图及功能_参数_MOS管芯片中文资料_VISHAY - 百芯EMA
IRF9510,IRF9510 pdf中文资料,IRF9510引脚图,IRF9510电路 …
元器件型号为IRF9510的类别属于半导体分立半导体,它的生产商为Kersemi Electronic。厂商的官网为:.....点击查看更多
IRF9510,IRF9510 pdf,IRF9510中文资料,IRF9510引脚图,IRF9510 …
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 8.7 2.2 4.1 Single S FEATURES - 100 1.2 • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available ...
IRF9510S, SiHF9510S www.vishay.com Vishay Siliconix S21-0904-Rev. D, 30-Aug-2021 5 Document Number: 91073 For technical questions, contact: [email protected] I t L +-t D
- 某些结果已被删除