-100V Single P-Channel Power MOSFET in a TO-220 package.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …

Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 …

IRF9520N Product details Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, …

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast …

-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Download the IRF9520N datasheet for detailed specifications and information on the IRF9520N electronic component. Datasheet4U.com - IRF9520N . IRF9520N Datasheet, mosfet …

2024年10月17日 · The IRF9520N is designed with newer semiconductor processes, leading to enhancements in power efficiency, thermal performance, and switching speed. This makes it a …