IRF9Z24 MOSFETs | Vishay
IRF9Z24. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High …
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …
IRF9Z24 Datasheet (PDF) - International Rectifier
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …
IRF9Z24 Vishay Siliconix | Discrete Semiconductor Products | DigiKey
IRF9Z24 – P-Channel 60 V 11A (Tc) 60W (Tc) Through Hole TO-220AB from Vishay Siliconix. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
IRF9Z24N Datasheet (PDF) - International Rectifier
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Uses IRF9Z24 data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN …
IRF9Z24参数_MOS管芯片中文资料_International Rectifier - 百芯EMA
IRF9Z24 International Rectifier MOS管芯片中文资料PDF, 共(8)页, IRF9Z24数据手册有芯片封装TO-220和参数资料。
IRF9Z24, SiHF9Z24 Datasheet by Vishay Siliconix - Digi-Key …
View IRF9Z24, SiHF9Z24 by Vishay Siliconix datasheet for technical specifications, dimensions and more at DigiKey.
10 www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 …
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.