55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to …

IRFZ44N由minos (迈诺斯)设计生产，立创商城现货销售。 IRFZ44N价格参考￥0.791。 minos (迈诺斯) IRFZ44N参数名称：类型：1个N沟道；漏源电压 (Vdss)：60V；连续漏极电流 …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ44N International Rectifier N沟道MOS管芯片中文资料PDF, 共 (9)页, IRFZ44N数据手册有芯片封装TO-220和参数资料。

下载IRFZ44NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featuresverylowon-stateresistance and has integral …

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral …

Low Leakage Inductance Current Transformer. dv/dt controlled by RG. ISD controlled by Duty Factor "D"

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ44N，是N渠道晶体管。 开态电阻，Rds（on）：0.024欧姆，满功率温度:25°C。