2014年4月28日 · Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature.

irfb4110pbf价格参考￥2.67。 Infineon(英飞凌) IRFB4110PBF参数名称：类型：1个N沟道；漏源电压(Vdss)：100V；连续漏极电流(Id)：180A；导通电阻(RDS(on))：4.5mΩ@10V,75A；耗散功率(Pd)：370W；阈值电压(Vgs(th))：4V；栅极电荷量(Qg)：210nC；输入电容(Ciss@Vds)：9.62nF；反向传输电容(Crss ...

Part #: IRFB4110PBF. Download. File Size: 710Kbytes. Page: 8 Pages. Description: High Efficiency Synchronous Rectification in SMPS. Manufacturer: International Rectifier.

100V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

IRFB4110PBF – N-Channel 100 V 120A (Tc) 370W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

2025年3月18日 · IRFB4110PBF Infineon Technologies MOSFETs MOSFT 100V 180A 4.5mOhm 150nC Qg datasheet, inventory, & pricing.

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irfb4110pbf 是一款100v单n沟道hexfet® 功率mosfet, 采用trench mosfet技术实现极低的导通电阻和快速开关性能。适用于高效同步整流, 用于smps, 不间断电源, 高速电源开关, 硬开关和高频电路。

来自 Infineon Technologies 的 IRFB4110PBF – 通孔 N 通道 100 V 120A（Tc） 370W（Tc） TO-220AB。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

IRFB4110PBF Infineon Technologies MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg 数据表, 库存, 价格.