100V Single N-Channel Power MOSFET in a TO-220 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

下载IRFB4310中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

Part #: IRFB4310. Download. File Size: 383Kbytes. Page: 11 Pages. Description: HEXFET Power MOSFET. Manufacturer: International Rectifier.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C.

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Fig 14. Typical Avalanche Current vs.Pulsewidth. 1. Avalanche failures assumption: excess of Tjmax. This is validated …

IRFB4310PBF – N-Channel 100 V 130A (Tc) 300W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

IRFB4310 Transistor Datasheet, IRFB4310 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

来自 Infineon Technologies 的 IRFB4310PBF – 通孔 N 通道 100 V 130A（Tc） 300W（Tc） TO-220AB。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

Part #: IRFB4310. Download. File Size: 330Kbytes. Page: 2 Pages. Description: isc N-Channel MOSFET Transistor. Manufacturer: Inchange Semiconductor Company Limited.

2023年5月17日 · IRFB4310 是由 英飞凌 科技（INFINEON）制造的一款高性能功率MOSFET（金属氧化物半导体场效应晶体管）。 这款芯片设计独特，具有优异的栅极、雪崩以及动态dV/dt耐受能力，适用于多种高效率电源转换应用。