100V Single N-Channel Power MOSFET in a TO-247 package.

IRFP150N由Infineon(英飞凌)设计生产，立创商城现货销售。 IRFP150N价格参考￥3.79。 Infineon(英飞凌) IRFP150N参数名称：类型：N沟道；漏源电压(Vdss)：100V；连续漏极电流(Id)：42A；功率(Pd)：160W；导通电阻(RDS(on)@Vgs,Id)：36mΩ@10V,23A；阈值电压(Vgs(th)@Id)：4V@250uA。

IRFP150N Product details Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFP150N HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

IRFP150 www.vishay.com Vishay Siliconix S22-0045-Rev. C, 24-Jan-2022 5 Document Number: 91203 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

IRFP150N – N-Channel 100 V 42A (Tc) 160W (Tc) Through Hole TO-247AC from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

部件名: IRFP150N. 下载. 文件大小: 135Kbytes. 页: 8 Pages. 功能描述: Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A). 制造商: International Rectifier.

Download the IRFP150N datasheet for detailed specifications and information on the IRFP150N electronic component. Datasheet4U.com - IRFP150N . IRFP150N Datasheet, mosfet equivalent, International Rectifier Download PDF (170.35KB) Preview is limited to a maximum of three pages.

View IRFP150N by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.