
IRFP4242PBF Datasheet (PDF) - International Rectifier
Part #: IRFP4242PBF. Download. File Size: 294Kbytes. Page: 8 Pages. Description: PDP MOSFET. Manufacturer: International Rectifier.
IRFP4242 Datasheet and Replacement. Cross Reference Search
IRFP4242 Transistor Datasheet, IRFP4242 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
IRFP4242PBF Infineon Technologies | Mouser
4 天之前 · IRFP4242PBF Infineon Technologies MOSFETs PDP SWITCH 300V 1 N-CH HEXFET datasheet, inventory, & pricing.
IRFP4242 Datasheet, PDF - Alldatasheet
IRFP4242PBF: INFINEON: MOSFET, N, 300V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Sourc...
IRFP4242PBF 数据表 (PDF) - International Rectifier
国际整流器(IR)是一家美国公司,专门从事电力管理和电力控制半导体的设计和制造。 该公司成立于1947年,总部位于加利福尼亚州的El Segundo。 IR提供了广泛的产品,包括电力管 …
Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site.
This HEXFET®Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSErating.
IRFP4242 Datasheet pdf - PDP Switch 300V Single N-Channel …
IRFP4242 datasheet, IRFP4242 pdf, IRFP4242 data sheet, datasheet, data sheet, pdf, International Rectifier, PDP Switch 300V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP4242 IR/FAIRCHI Transistors - Veswin Electronics
Looking for IRFP4242? Welcome to Veswin.com, Our Sales are here to help you. You can get components availability and pricing for IRFP4242, view detailed information that including IRFP4242 manufacturer and datasheets. You can buy …
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IRFP4242PBF Datasheet by Infineon Technologies - Digi-Key …
low on-resistance per silicon area and low E PULSE rating. Additional features of this MOSFET are 175°C. operating junction temperature and high repetitive peak current capability. These features combine to. make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Pa rameter U nits.