Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. Junction temperature.

75V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

下载IRFP4368PBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

IRFP4368PBF是一款75V单N沟道HEXFET®功率MOSFET，采用Trench MOSFET技术实现极低的导通电阻和快速开关性能。 适用于高效同步整流，用于SMPS，不间断电源，高速电源开关，硬开关和高频电路。 立创商城IRFP4368PBF型号页面提供型号详细中文资料，PDF数据手册在线查看和下载,中文参数，引脚图，代替型号和在线购买等信息。 买IRFP4368PBF型号,上立创商城.

IRFP4368PBF – N-Channel 75 V 195A (Tc) 520W (Tc) Through Hole TO-247AC from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Description: N-Channel MOSFET Transistor. Manufacturer: Inchange Semiconductor Company Limited.

2025年3月13日 · IRFP4368PBF Infineon Technologies MOSFETs MOSFT 75V 350A 1.85mOhm 380nC Qg datasheet, inventory, & pricing.

来自 Infineon Technologies 的 IRFP4368PBF – 通孔 N 通道 75 V 195A（Tc） 520W（Tc） TO-247AC。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

IRFP4368PBF International Rectifier MOS管芯片中文资料PDF, 共 (5)页, IRFP4368PBF数据手册有芯片封装TO-247-3引脚图及功能定义和参数资料, N沟道,75V,350A,1.85mΩ@10V。

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may …