IRF610 www.vishay.com Vishay Siliconix S21-0819-Rev. C, 02-Aug-2021 4 Document Number: 91023 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT …

IRF610由TI (德州仪器)设计生产，立创商城现货销售。 IRF610价格参考￥0.4723。 TI (德州仪器) IRF610参数名称：类型：1个N沟道；漏源电压 (Vdss)：200V；连续漏极电流 (Id)：3.3A；导 …

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, …

accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance i. any existing surface mount package. The D2PAK (TO-263) is suitable …

来自 Vishay Siliconix 的 IRF610PBF – 通孔 N 通道 200 V 3.3A（Tc） 36W（Tc） TO-220AB。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

IRF610 VISHAY MOS管芯片中文资料PDF, 共 (8)页, IRF610数据手册有芯片封装TO-220-3引脚图及功能定义和参数资料, 功率MOSFET Power MOSFET。

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Description: N-Channel Power MOSFETs, 3.5A, 150-200V. Manufacturer: Fairchild Semiconductor.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in …