IRFS630A由onsemi (安森美)设计生产，立创商城现货销售。 IRFS630A价格参考￥1.0756。 onsemi (安森美) IRFS630A参数名称：类型：1个N沟道；漏源电压 (Vdss)：200V；连续漏极电流 (Id)：6.5A；导通电阻 (RDS (on))：400mΩ@10V,3.25A；耗散功率 (Pd)：38W；阈值电压 (Vgs (th))：2V；栅极电荷量 (Qg)：29nC；输入电容 (Ciss@Vds)：650pF@25V；反向传输电容 (Crss)：55pF@25V；工作温度：-55℃~+150℃。 下载IRFS630A中文资料、引脚图 …

Part #: IRFS630A. Download. File Size: 261Kbytes. Page: 7 Pages. Description: Advanced Power MOSFET. Manufacturer: Fairchild Semiconductor.

IRFS630A – N-Channel 200 V 6.5A (Tc) 38W (Tc) Through Hole TO-220F from Fairchild Semiconductor. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. …

来自 Fairchild Semiconductor 的 IRFS630A – 通孔 N 通道 200 V 6.5A（Tc） 38W（Tc） TO-220F。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

部件名: IRFS630A. 下载. 文件大小: 261Kbytes. 页: 7 Pages. 功能描述: Advanced Power MOSFET. 制造商: Fairchild Semiconductor.

Fairchild Semiconductor 的 IRFS630A – N 通道 200 V 6.5 A (Tc) 38W (Tc) 通孔式 TO-220F。 DigiKey 提供數百萬款電子元件的價格及供貨情況。

N-CHANNELPOWER MOSFETFig 1. Output CharacteristicsFig 2. Transfer CharacteristicsFig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source VoltageFig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain CurrentIRFS630A10 Datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and ...

IRFS630A Advanced Power Mosfet FEATURES. Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA (Max.)

This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore …