IRFZ24 www.vishay.com Vishay Siliconix S21-1262-Rev. D, 27-Dec-2021 6 Document Number: 91406 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

IRFZ24. Power MOSFET. General Information: General Information. Useful Web Links. Markings: Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information: Package Information. TO-220AB (High Voltage) Reliability Data: …

2025年3月14日 · IRFZ24 Vishay / Siliconix MOSFETs RECOMMENDED ALT IRFZ datasheet, inventory, & pricing.

IRFZ24 Product details DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRFZ24NPBF是一款55V单N沟道HEXFET®功率MOSFET，采用先进的平面技术，具有极低的导通电阻，以及快速开关性能。 立创商城IRFZ24NPBF型号页面提供型号详细中文资料，PDF数据手册在线查看和下载,中文参数，引脚图，代替型号和在线购买等信息。 买IRFZ24NPBF型号,上立创商城.

View datasheets for IRFZ24, SiHFZ24 by Vishay Siliconix and other related components here.

Uses IRFZ24N data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Fig 1. Typical Output Characteristics. Fig 2. Typical Output Characteristics. Fig 3. Typical Transfer Characteristics. Fig 4. Normalized On-Resistance Vs. Temperature

View IRFZ24 by Vishay Siliconix datasheet for technical specifications, dimensions and more at DigiKey.

accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- D 2 Pak TO-262. resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.