55V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Part #: IRFZ24N. Download. File Size: 123Kbytes. Page: 8 Pages. Description: Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A). Manufacturer: International Rectifier.

IRFZ24N由Infineon(英飞凌)设计生产，立创商城现货销售。 IRFZ24N价格参考￥3.7。 Infineon(英飞凌) IRFZ24N参数名称：类型：1个N沟道；漏源电压(Vdss)：55V；连续漏极电流(Id)：17A；导通电阻(RDS(on)@Vgs,Id)：70mΩ@10A,10V；阈值电压(Vgs(th)@Id)：4V@250uA；栅极电荷(Qg@Vgs)：20nC@10V ...

IRFZ24N Transistor Datasheet, IRFZ24N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

IRFZ24 www.vishay.com Vishay Siliconix S21-1262-Rev. D, 27-Dec-2021 6 Document Number: 91406 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

minos(迈诺斯) IRFZ24N参数名称：类型：1个N沟道；漏源电压(Vdss)：60V；连续漏极电流(Id)：30A；导通电阻(RDS(on))：25mΩ@10V,10A。 下载IRFZ24N中文资料、引脚图、Datasheet数据手册，有场效应管(MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

IRFZ24NPBF是一款55V单N沟道HEXFET®功率MOSFET，采用先进的平面技术，具有极低的导通电阻，以及快速开关性能。 立创商城IRFZ24NPBF型号页面提供型号详细中文资料，PDF数据手册在线查看和下载,中文参数，引脚图，代替型号和在线购买等信息。 买IRFZ24NPBF型号,上立创商城.

IRFZ24N Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer

It provides the highest power capability and the lowest possible on- D 2 Pak TO-262. resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to …

Part #: IRFZ24N. Description: Power MOSFET (Vdss=55V, Rds (on)=0.07ohm, Id=17A). File Size: 123.82 Kbytes. Manufacturer: International Rectifier.