IRFZ44N - Infineon Technologies
55 V Single N-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to …
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …
IRFZ44N,127 NXP USA Inc. | Discrete Semiconductor Products
Order today, ships today. IRFZ44N,127 – N-Channel 55 V 49A (Tc) 110W (Tc) Through Hole TO-220AB from NXP USA Inc.. Pricing and Availability on millions of electronic components from …
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ44Z - Infineon Technologies
55V Single N-Channel Power MOSFET in a TO-220 package. The StrongIRFET™ power MOSFET family is optimized for low R DS (on) and high current capability. The devices are …
IRFZ44 Datasheet(PDF) - NXP Semiconductors
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral …
IRFZ44NPBF Infineon Technologies | Discrete Semiconductor …
IRFZ44NPBF – N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key …
accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance i.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRFZ4 Datasheet, PDF - Alldatasheet
IRFZ4 Datasheet, PDF : Search Partnumber : Included a word "IRFZ4"-Total : 37 ( 1/2 Page) Manufacturer: Part No. Datasheet: Description: International Rectifier: AUIRFZ44N 179Kb / …