55V Single N-Channel Power MOSFET in a TO-220 package.

IRFZ46 Product details Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

IRFZ46Z is a 55V single n-channel HEXFET power MOSFET in a TO-220AB package with 175°C operating temperature, produced in industry-leading quality.

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

下载IRFZ46NPBF中文资料、引脚图、Datasheet数据手册，有场效应管 (MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

2023年1月12日 · N 通道功率 MOSFET 50A 至 59A，InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑 …

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

HEXFET® Power MOSFET • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements. VDSS= 50V. RDS(on) ID= 50*A. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.