100V Single N-Channel Power MOSFET in a TO-220 package.

100V Single N-Channel IR MOSFET in a D2-Pak package. Please register or log in to myInfineon to request Product Reliability Data via our support portal. Top 6 FAQs. Use the search bar …

It provides the highest power capability and the lowest possible on- D 2 Pak TO-262. resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to …

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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IRL2910STRLPBF – N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Maximum Effective Transient Thermal Impedance, Junction-to-Case. Fig 14. For N-Channel HEXFETS.

N 通道功率 MOSFET 50A 至 59A，InfineonInfineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR)Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家 …

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Uses IRL2910 data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.