J.I. Shim's 7 research works with 126 citations and 144 reads, including: Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting...

S Hwang, J Shim. IEEE Transactions on Electron Devices 55 (5), 1123-1128, 2008. 89: 2008: An explanation of efficiency droop in InGaN-based light emitting diodes: Saturated radiative recombination rate at randomly distributed In-rich active areas. JI Shim, H Kim, DS Shin, HY Yoo.

2010年9月30日 · We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R = A n + B n 2 + C n 3 + f (n) ⁠, where f (n) represents carrier leakage out of the active region. The term f (n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination.

2019年5月3日 · We investigate the current-dependent and temperature-dependent efficiency droops ("J-droop" and "T-droop", respectively) in InGaN-based blue and AlGaInP-based red light-emitting diodes (LEDs). It is found that the blue and red LEDs show different droop behaviors with increasing current density and temperature.

Affiliations: [Opto-Electronics Research Laboratories, NEC Limited, Tsukuba, Ibaraki, Japan, Department of Physical Electronics, Tokyo Institute of Technology, .

2014年9月29日 · In order to resolve this conflicting issue, we have studied the nonlinear optical properties of monolayer grown by chemical vapor deposition. The polycrystalline nature of the monolayer was directly probed by the SHG polarization dependence across the grain boundaries using femtosecond pulses.

J.-i. Shim: 9 Followers, 4 Following, 18 Research papers. Research interests: Laser-Matter interactions, Laser, and Quantum Optics.

J Shim, J Lim, DM Geum, JB You, H Yoon, JP Kim, WJ Baek, JH Han, ... IEEE Transactions on Electron Devices 69 (4), 2151-2158, 2021. 12: 2021: High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors. J Shim, J Lim, DM Geum, JB You, H Yoon, JP Kim, WJ Baek, I Kim, ...

Jong-In Shim (M’95) was born in Kangreung, South Korea, in 1960. He received the B.S. and M.S. degrees in electronics from the Seoul National University, Seoul, South Korea, in 1983 and 1985, respectively, and the Ph.D. degree in physical electronics from the Tokyo Institute of Technology, Tokyo, Japan, in 1992.

J.I. Shim's 6 research works with 125 citations and 82 reads, including: Band gap shrinkage in GaInAs/GaInAsP/InP multi‐quantum well lasers